Recommended reasons:
For applications such as AI/ML with high current demand, the LTP88xx-series provides efficient, dense, scalable, and direct power solutions from 54V input to core voltages, removing the need for an intermediate bus voltage architecture. This family (LTP8802A-1B, LTP8803-1A, LTP8800-4A, LTP8800-1A, LTP8800-2) features a PMBus interface and supports a wide range of output voltages (0.5V to 3.6V) and currents (up to 200A). These devices can be easily paralleled to support higher currents, even in the 1kA to 2kA range.
Recommended reasons:
The EPC2367 is a state-of-the-art enhancement-mode GaN (eGaN®) power FET that leverages the unique physical and electrical properties of gallium nitride to achieve superior performance compared to traditional silicon MOSFETs. Operating at 100 V with an ultra-low RDS(on) of just 1.2 mΩ (typical), the EPC2367 is designed to meet the demands of next-generation high-frequency, high-efficiency power systems. Packaged in a compact, thermally enhanced 3 mm x 5 mm QFN, it supports top-side cooling and is optimized for layouts that require minimal parasitics—enabling faster design cycles and superior thermal management.
Recommended reasons:
Brightlaser 680nm Red VCSEL is meticulously designed to deliver exceptional performance and reliability in even the most challenging environments, offering outstanding efficiency and precision for industrial and wearable applications.
Key Competitive Advantages
• Outstanding High-Temperature Performance
Brightlaser’s 680nm VCSELs support continuous wave (CW) operation at temperatures up to 85°C—surpassing industry standards and competitor offerings. This remarkable thermal stability guarantees consistent, dependable operation in demanding conditions.
• Industry-Leading Optical Power
Each emitter delivers up to 10mW of output power, setting a new benchmark for single-emitter performance in the industry.
• Ultra-Low Operating Current
Achieves 5mW output at just 6mA, significantly lower than the 15–20mA typically required by conventional lasers. This translates into greater energy efficiency and extended operational lifespan.
• Proven Reliability
Extensive testing verifies the reliability of Brightlaser’s VCSELs, with stable output power and voltage maintained across a broad temperature range in both CW and pulsed modes—making them ideal for mission-critical applications.
Recommended reasons:
As USB Type-C with Power Delivery (PD) becomes the universal interface for high-power (up to 240W) and high-data-rate applications, system designers face critical challenges: managing dynamic and wide range of power contracts, preventing fault propagation, and minimizing solution footprint.
The MT7932 is a high-voltage high-current bidirectional load switch developed by M3TEK for USB Type-C PD applications. This IC features high voltage and current rating at 33V and 5A with integrated ultra-low Rdson power devices,bidirectional power flow with FRS function, ideal diode to reverse blocking, and I2C digital interface.
MT7932 provides comprehensive protection functions including Input voltage surge protection; Input current surge protection; Output constant-current control; Output short-circuit protection; Thermal shutdown protection. Additionally, the I2C interface of the device enables digital control over: Power flow direction control; Input overvoltage threshold; Output current limit level; Soft-start time; Undervoltage threshold and Discharge time. MT7932 achieves high efficiency, compact footprint, minimal external components, and delivers robust yet flexible protection capabilities.
• Wide Supply Voltage Range from 3.3V to 33V
• 36V ABM rating on Port VBUS1 and VBUS2
• Integrate a 25mΩ Ultra Low Rdson Protection Switch
• I2C Interface
o Programmable Soft-Start Time
o Programmable Input Over-voltage Threshold
o Programmable current limit
o Programmable power direction
o Programmable ideal diode function
• Each Port VBUS1/VBUS2 Independent Control
• Package QFN 3x3_16L
Recommended reasons:
Launched in July 15, 2025
CPC2501M, a robust, self-actuating, normally closed solid-state relay optimized for chime bypass in video doorbell systems.
Designed to replace discrete relay circuitry, the CPC2501M is the first application-specific integrated circuit (ASIC) in the Littelfuse portfolio for this function. It integrates self-protection, fault timing, and solid-state switching into a single compact 6x6 mm QFN package—simplifying video doorbell integration while enhancing reliability and safety.
Key Features and Benefits
• Integrated self-actuating logic eliminates the need for external microcontrollers or software control
• Built-in fault protection timer (~17 seconds) automatically resets during prolonged button presses or chime failure
• High-performance switching with 60 VP bidirectional voltage and 1.84 ARMS continuous load current
• Peak current capability of 5 A for handling start-up and surge conditions
• Thermally optimized 6×6 mm QFN-16 package conserves PCB space for compact module designs
• Installable behind standard 8–24 VAC doorbell transformers
Recommended reasons:
The AP33771C and AP33772S USB Type-C® PD 3.1 extended power range (EPR) sink controllers are deserving of the Power Semiconductor Product of the Year award for several compelling reasons, primarily due to their advanced features, robust protection, ease of use, cost-effectiveness, and significant impact on standardizing power delivery.
Ease of Design and Use
These controllers simplify product design and manufacturing. They feature built-in, production-ready, and tested firmware that is USB PD compliant, simplifying application development by reducing the need for custom firmware programming. This includes moisture detection between the DP and DN pins and automatic cable voltage drop compensation. They also support the insertion orientation of the USB Type-C® attachment and provide LED light indication for system status.
The AP33771C offers simple resistor settings for voltage and current selection, making it easy to use without a microcontroller (MCU). It allows designers to set up to eight different output voltages and eight different output currents using just two external resistors, supporting multiple power profiles in different systems without programming. For designs with an MCU, the AP33772S offers flexibility through an I2C interface, providing access to multiple power profiles and allowing the configuration of various protection features.
Recommended reasons:
The world’s first OVP IC designed specifically for CC and VCONN protection in active cables.
With the increasing adoption of the USB Type-C interface and the introduction of the PD 3.1 specification, which supports up to 240W (48V/5A), power protection has become more critical than ever.
In Type-C port designs, the pins are tightly spaced. During hot-plugging, under high humidity, or after prolonged use and thermal cycling, the metal of the pin contacts may deform, potentially causing short circuits between the high-voltage VBUS pin and low-voltage CC or VCONN pins.
This product provides 48V short-to-VBUS overvoltage protection for the CC and VCONN lines on the connector side. When the voltage exceeds the OVP threshold, the protection responds in just 100ns, quickly disconnecting the switch to prevent damage to CC and VCONN lines caused by overvoltage.
Furthermore, due to the limited space on active cable paddle cards, the FA2219 integrates ideal diode functionality within a compact 1.905mm x 1.905mm package, making it a direct replacement for discrete ideal diodes traditionally used on paddle cards.
Recommended reasons:
Double side cooling design is a critical feature to increase the power density without increasing the total volume a lot. Also, the key parameter of power module is the stray inductance. The NIKO’s SPR Pack commit the ultra low stray inductance which is in the level of 6 nH. The ultra low stray inductance power module can reach the 800V inverter system or the hot swap switch.
Recommended reasons:
TI's innovative UCG28826 self-biasing GaN flyback converter provides engineers with a highly configurable solution that enables a simplified, auxless design, high efficiency, high density, and easier EMI compliance for (up to) 65W AC/DC consumer power supplies.
The UCG28826 offers industry’s first self-biasing operation, which eliminates the transformer auxiliary winding and associated power conversion circuitry to enable simplified design, higher power density (>2.8W/cm3 without casing) and lower cost.
Recommended reasons:
The Solid-State Transformer (SST) is a cornerstone in the Future Power Architecture for 800V HVDC AI Server Data Centers, enabling efficient power conversion from medium-voltage grids (10 kVac ~ 33 kVac) to HVDC (800 Vdc). By exclusively integrating ST SiC MOSFETs and SiC diodes, the SST achieves industry-leading efficiency and compactness, addressing the growing power demands of AI server infrastructures.
Key ST components include:
STPSC20H12G in the DNPC PFC stage, ensuring low conduction losses and high reliability.
SCT025H120G3AG and SCT018H65G3-7 in the SHB LLC and secondary stages, enabling high-frequency operation with reduced switching losses.
Notable features include:
SiC Gen3 MOSFETs with low RDS(on) for reduced conduction losses.
SiC diodes with fast recovery characteristics for minimized switching losses.
High-frequency operation, allowing for compact transformer designs and enhanced power density.
Supporting multi-cell configurations for flexible and reliable operation.
In AI server data centers, the SST plays a pivotal role in replacing traditional transformers and rectifiers, enabling direct HVDC distribution to power shelves and DC-DC bricks. This architecture simplifies power distribution, reduces energy losses, and enhances overall system efficiency to meet the high computational demands of AI workloads.
Recommended reasons:
onsemi’s UG4SC075005L8S are very popular in AI PSU designs and are enabling the next generation of 20kW systems. It addresses critical challenges in high-current, high-power scenarios through its innovative architecture, high efficiency, reliability, and system compatibility. Unique design/special feature/technology used include:
• Combo JFET is designed to give users separate access to the MOSFET and SiC JFET gates
• Low RDSON-> Low loss, high efficiency
• Peak Current (IDM)-> High current ride through capability
• Low RθJC-> Low TJ and better lifetime
• Speed controllability-> Ideal for circuit protection and multiple parallel application
• Simple construction-> Long lifetime without parameter shift
• Gate Drive Compatibility with silicon devices that have a 5V threshold, enhanced reliability, and simplified speedcontrol.
Recommended reasons:
The MP2764 is a highly integrated buck-boost charger IC with the following key features:
• NVDC power management control.
• Flexible application configurations: Dual phases interleave (two inductors) operation with current balancing or Dual phases parallel (Single inductor) operation.
• IMVP9-compliant for the Intel CPU platform.
• Support 4V~22V input voltage and reverse OTG voltage to meet PD SPR voltage range.
• Support over 8A charge current and 5A OTG output current.
• Complete protection functions.
Advantages vs Traditional Discrete Solution:
• The total solution saves over 40% PCB area.
• Much higher efficiency and excellent thermal performance.
• Dual-phase allows slimmer and smaller inductors for Ultrabook design.
• Less bom components for easier supply chain management.
Applications: Notebooks, Ultrabook, Gaming Console and other portable devices which need fast charge.
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