Wolfspeed's released EM4E120-032D10, new 4th generation 9.6 mΩ bare die MOSFET, designed to deliver excellent performance for custom module builds. This product features 25% reduction in max RDSON and an improved RDSON distribution compared to Wolfspeed's 3rd generation technology.

The EM4E120-032D10 is designed to enable reduced system cost and development time for module manufacturers via faster and cleaner switching. The integrated soft body diode significantly improves switching performance, achieving up to 30% improvement over the baseline 3rd generation MOSFET. Coupled with a high capacitance ratio exceeding 500, the EM4E120-032D10 provides a robust solution against parasitic turn-on.

Several advancements were made to maximize performance even in the harshest environments like automotive applications. The die metallization supports both backside and topside soldering and sintering, ensuring minimal thermal impedance between the die and package. Beyond the performance, EM4E120-032D10 successfully passed full AECQ-101 reliability testing at 185C, marking the highest continuous operating thermal junction temperature achieved for a released Wolfspeed bare die product. Additional testing confirms the capability for intermittent operation at 200C for 100 hours throughout the device's lifespan. This product further improves the FIT rate by 100x in comparison to the baseline.

Considering these performance and reliability advancements, the EM4E120-032D10 stands out as an optimal choice for custom modules build in the automotive powertrain application space.