The EPC2367 is a state-of-the-art enhancement-mode GaN (eGaN®) power FET that leverages the unique physical and electrical properties of gallium nitride to achieve superior performance compared to traditional silicon MOSFETs. Operating at 100 V with an ultra-low RDS(on) of just 1.2 mΩ (typical), the EPC2367 is designed to meet the demands of next-generation high-frequency, high-efficiency power systems. Packaged in a compact, thermally enhanced 3 mm x 5 mm QFN, it supports top-side cooling and is optimized for layouts that require minimal parasitics—enabling faster design cycles and superior thermal management.
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