High-Efficiency SST with ST SiC Gen3 and SiC diode Technology
Candidate for:EE Awards - Power Semiconductor
The Solid-State Transformer (SST) is a cornerstone in the Future Power Architecture for 800V HVDC AI Server Data Centers, enabling efficient power conversion from medium-voltage grids (10 kVac ~ 33 kVac) to HVDC (800 Vdc). By exclusively integrating ST SiC MOSFETs and SiC diodes, the SST achieves industry-leading efficiency and compactness, addressing the growing power demands of AI server infrastructures.
Key ST components include:
STPSC20H12G in the DNPC PFC stage, ensuring low conduction losses and high reliability.
SCT025H120G3AG and SCT018H65G3-7 in the SHB LLC and secondary stages, enabling high-frequency operation with reduced switching losses.
Notable features include:
SiC Gen3 MOSFETs with low RDS(on) for reduced conduction losses.
SiC diodes with fast recovery characteristics for minimized switching losses.
High-frequency operation, allowing for compact transformer designs and enhanced power density.
Supporting multi-cell configurations for flexible and reliable operation.
In AI server data centers, the SST plays a pivotal role in replacing traditional transformers and rectifiers, enabling direct HVDC distribution to power shelves and DC-DC bricks. This architecture simplifies power distribution, reduces energy losses, and enhances overall system efficiency to meet the high computational demands of AI workloads.
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