TDM24745T is the industry’s first TLVR (trans inductor voltage regulator) quad phase OptiMOS™ power module. It co integrates four power stages, a TLVR inductor and decoupling capacitors into a compact 9 × 10 × 5 mm³ package, delivering industry leading current density exceeding 2 A/mm². This high density co pack design optimizes PCB layout to enable exceptional transient performance for low voltage, high dynamic AI accelerator core rail.

Special features
• Up to 320 A peak current capability for next generation AI processor and high current multiprocessor platforms.
• TLVR architecture can reduce required output capacitance by up to 50%, saving board space and BOM cost while improving signal integrity.
• Extremely fast transient response shortens power rail recovery and increases system stability and compute throughput.
• Compatibility with lateral and vertical power delivery (VPD) helps lower PDN losses and reduce total cost of ownership (TCO).
• Seamless integration into Infineon’s end to end AI server power ecosystem.

Technologies used
• OptiMOS 6 MOSFET technology with chip embedded integration for improved efficiency and thermal performance.
• Proprietary TLVR magnetics and advanced chip embedded packaging to optimize transient and thermal behavior.
• Tight integration with Infineon digital multiphase controllers for flexible, scalable power architectures.
• Leverages Si, SiC and GaN material advantages to ensure supply resilience and system level support.

The TDM24745T represents a decisive leap in power module design, delivering higher power density, faster transients and lower system cost for AI data centers.