GaN HEMT Epitaxy With Breakdown Voltage >1000V Grown by MBE
Candidate for：EE Awards - Innovation R&D Award
We report on a GaN power HEMT grown by MBE on sapphire with a breakdown voltage exceeding 1000V. The high breakdown voltage larger than 1000 V is achieved through utilizing an thin AlN buffer layer grown by MBE and the implementation of a single-level gate field plate technique. The MBE technique facilitates the growth of a dopant-free buffer layer, which is advantageous for the high reliability of GaN power HEMTs. Meanwhile, the single-level field plate technique helps to reduce the fabrication cost and to improve the reliability of GaN power HEMTs. These merits indicate the potential of the fabricated GaN power HEMT for applications in high-power electronics.
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