1Gb 1.8V SPI NOR Flash（DS25M4DN-16A1B8)
Candidate for：EE Awards - Memory Solution
The 55nm process of the product has higher density integration, optimized and upgraded on the basis of the performance of the original product, and the process is constantly innovated. It has a chip circuit design with higher density and more complex functions, which makes the feature size of the product continuously shrink. At the same time, the product supports four command modes of Single/Dual/Quad SPI and QPI, and DTR transmission mode, continuously improving reliability. The temperature ranges from-40 ℃ to 125 ℃, which will be more suitable for more demanding automotive-grade application environments.
Standards：
Density:1Gb
Voltage: 1.8V
Temperature: -40℃~125℃
Speed:166MHz
Package: BGA23
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