The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation). This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.