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Wolfspeed is expanding our portfolio of industry-leading SiC MOSFET & Schottky diode discrete products with the addition of the new Top Side Cooled (TSC) package: the U2. With options ranging from 650 V – 1200 V, Wolfspeed’s TSC products significantly increase system level power density and efficiency, while improving thermal management and board layout flexibility.
Top side cooled (TSC) devices dissipate heat through the top side of the package. Inside TSC packages, the die sits upside down in the upper portion of the package to allow heat to flow directly to the top surface. Generally, TSC devices are best suited for high-performance applications such as AI Data Center related applications where high-power densities, advanced thermal management solutions, and small footprints are essential. Within these applications, TSC devices help address cooling requirements by enabling maximum power dissipation and optimizing thermal performance.
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TI's innovative UCG28826 self-biasing GaN flyback converter provides engineers with a highly configurable solution that enables a simplified, auxless design, high efficiency, high density, and easier EMI compliance for (up to) 65W AC/DC consumer power supplies.
The UCG28826 offers industry’s first self-biasing operation, which eliminates the transformer auxiliary winding and associated power conversion circuitry to enable simplified design, higher power density (>2.8W/cm3 without casing) and lower cost.
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RTQ2588-QB is a high-precision, low-power voltage detector rest IC specifically designed for automotive systems. It is AEC-Q100 qualified and supports ASIL-B functional safety compliance, addressing the stringent reliability and safety demands of automotive electronics.
With an ultra-low quiescent current—typically 3.5μA and a maximum of 7μA—RTQ2588-QB ensures stable operation even under high-temperature conditions, making it particularly well-suited for low-power platforms requiring long standby durations. It delivers ±0.78% voltage detection accuracy across the full temperature range, enabling precise over-voltage and under-voltage monitoring for timely system protection. The integrated self-diagnostic circuitry enhances fault detection capability and reinforces the overall functional safety system.
By combining accuracy, power efficiency, and safety in a single compact solution, RTQ2588-QB simplifies system design while optimizing performance. It has already been evaluated and adopted by Tier-1 automotive manufacturers and is ideal for power monitoring in systems that demand high stability and energy efficiency.
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ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup - meeting the market demand for even smaller and more efficient high-power applications.
The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.
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Double side cooling design is a critical feature to increase the power density without increasing the total volume a lot. Also, the key parameter of power module is the stray inductance. The NIKO’s SPR Pack commit the ultra low stray inductance which is in the level of 6 nH. The ultra low stray inductance power module can reach the 800V inverter system or the battery over current protection swtich.
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