Power Semiconductor-EE Awards-EE Times

Product：Top Side Cooled SiC Devices for AI Data Center related Applications

Recommended reasons： Wolfspeed 正持續擴展其業界領先的碳化矽（SiC）MOSFET 和蕭特基二極體（Schottky Diode）分立元件產品線，最新推出頂部散熱（Top Side Cooled, TSC）封裝的 U2 系列。該系列提供 650V 至 1200V 多種電壓選項，能顯著提升系統功率密度與效率，同時優化熱管理效能並提高電路板佈局的靈活性。頂部散熱 (Top Side Cooled, TSC) 元件的熱能主要透過封裝頂部進行散逸。在 TSC 封裝結構中，晶片（die）以倒裝方式置於封裝頂部，使熱量可直接傳導至元件上表面。此設計特別適合高效能應用，例如AI 資料中心等需要高功率密度、先進熱管理方案及小型化設計的場合。在這些應用中，TSC 元件能有效滿足冷卻需求，實現最大功率散逸並優化整體熱效能。

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Texas Instruments

Product：UCG28826 Self-biased high frequency QR flyback converter with integrated GaN (65W)

Recommended reasons： TI's innovative UCG28826 self-biasing GaN flyback converter provides engineers with a highly configurable solution that enables a simplified, auxless design, high efficiency, high density, and easier EMI compliance for (up to) 65W AC/DC consumer power supplies. The UCG28826 offers industry’s first self-biasing operation, which eliminates the transformer auxiliary winding and associated power conversion circuitry to enable simplified design, higher power density (>2.8W/cm3 without casing) and lower cost.

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Richtek Technology Corporation

Product：Automotive High-Accuracy Reset IC with Functional Safety Support

Recommended reasons： RTQ2588-QB is a high-precision, low-power voltage detector rest IC specifically designed for automotive systems. It is AEC-Q100 qualified and supports ASIL-B functional safety compliance, addressing the stringent reliability and safety demands of automotive electronics. With an ultra-low quiescent current—typically 3.5μA and a maximum of 7μA—RTQ2588-QB ensures stable operation even under high-temperature conditions, making it particularly well-suited for low-power platforms requiring long standby durations. It delivers ±0.78% voltage detection accuracy across the full temperature range, enabling precise over-voltage and under-voltage monitoring for timely system protection. The integrated self-diagnostic circuitry enhances fault detection capability and reinforces the overall functional safety system. By combining accuracy, power efficiency, and safety in a single compact solution, RTQ2588-QB simplifies system design while optimizing performance. It has already been evaluated and adopted by Tier-1 automotive manufacturers and is ideal for power monitoring in systems that demand high stability and energy efficiency.

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ROHM Co., Ltd.

Product：ROHM 650V GaN HEMT in TOLL package

Recommended reasons： ROHM began mass production of its 1st generation of its 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package. This time, ROHM has developed the product incorporating 2nd generation elements in a TOLL package, and added it to existing DFN8080 package to strengthen ROHM’s 650V GaN HEMT package lineup - meeting the market demand for even smaller and more efficient high-power applications. The new products integrate 2nd generation GaN-on-Si chips in a TOLL package, achieving industry-leading values in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This contributes to further miniaturization and energy efficiency in power systems that require high voltage resistance and high-speed switching.

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NIKO Semiconductor

Product：SPR Pack

Recommended reasons： Double side cooling design is a critical feature to increase the power density without increasing the total volume a lot. Also, the key parameter of power module is the stray inductance. The NIKO’s SPR Pack commit the ultra low stray inductance which is in the level of 6 nH. The ultra low stray inductance power module can reach the 800V inverter system or the battery over current protection swtich.

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ROHM Co., Ltd.

Product：ROHM Develops New High Power Density SiC Power Modules

Recommended reasons： The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation). This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.

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ROHM Co., Ltd.

Product：ROHM New TRCDRIVE pack™ with 2-in-1 SiC Molded Module

Recommended reasons： A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in - resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs. The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.

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